TAILIEUCHUNG - Báo cáo hóa học: " Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling "

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling | Nanoscale Res Lett 2010 5 1930-1934 DOI s11671-010-9802-z SPECIAL ISSUE ARTICLE Temperature-Dependent Site Control of InAs GaAs 001 Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth Takashi Toujyou Shiro Tsukamoto Received 25 June 2010 Accepted 10 September 2010 Published online 20 October 2010 The Author s 2010. This article is published with open access at Abstract Site-controlled InAs nano dots were successfully fabricated by a STMBE system in situ scanning tunneling microscopy during molecular beam epitaxy growth at substrate temperatures from 50 to 430 C. After ML of the InAs wetting layer WL growth by ordinal Stranski-Krastanov dot fabrication procedures we applied voltage at particular sites on the InAs WL creating the site where In atoms which were migrating on the WL favored to congregate. At 240 C InAs nano dots width 20-40 nm height nm were fabricated. At 430 C InAs nano dots width 16-20 nm height nm were also fabricated. However these dots were remained at least 40 s and collapsed less than 1000 s. Then we fabricated InAs nano dots width 24-150 nm height nm at 300 C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots. Keywords Quantum dot Site control In situ Scanning tunneling microscopy Molecular beam epitaxy Introduction Recently studies on the semiconductor self-assembled quantum dot QD have great attentions because of their applications in optoelectronics such as high-efficiency QD lasers QD solar cells QDSCs etc. Especially QDSCs 1 are easily turned to the sunlight spectrum since it can select the photo-absorption wave length by controlling QD size and superlattice structures to form an intermediate T. Toujyou S. Tsukamoto Center for Collaborative Research Anan National College of Technology Anan Tokushima 774-0017 Japan e-mail toujyou@ 0 Springer band or a miniband rather than a multiplicity of discrete quantized .

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