TAILIEUCHUNG - between magnetic impurities on magnetization in diluted magnetic semiconductors

We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration. | Communications in Physics, Vol. 22, No. 1 (2012), pp. 53-58 EFFECT OF THE DIRECT EXCHANGE INTERACTION BETWEEN MAGNETIC IMPURITIES ON MAGNETIZATION IN DILUTED MAGNETIC SEMICONDUCTORS VU KIM THAI Institute of Physics, VAST LE DUC ANH Hanoi National University of Education HOANG ANH TUAN Institute of Physics, VAST Abstract. We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration. I. INTRODUCTION The DMS combine ferromagnetism with the conductivity properties of semiconductors. Therefore, they are ideal materials for applications in spintronics where not only the electron charge but also the spin of the charge carrier is used for information processing. For instance, they allow to resolve the conductivity mismatch problem which hinders a high polarizability of injected electrons in a ferromagnetic metal/semiconductor junction [1]. One prominent DMS is Ga1−x Mnx As (typical x ≈ 1 − 10%) with the Mn ions substitutionally replacing Ga at the cation sites. Mn ions in Ga1−x Mnx As serve a dual purpose, acting both as acceptors and as magnetic impurities, whose spins align at the ferromagnetic transition [2]. Since it is widely believed that the carriers are mediating ferromagnetic interaction, ferromagnetism in DMS is called carrier-induced ferromagnetism and several theories addressing the mechanism are already available [3]. Some mean-field theories, based on the RKKY interaction [4-5] have succeeded in explaining some characteristic and transport properties of DMS’s. However, further results show that for a low doping level .

• Vật lý
• Communications in Physics
• Effect of the direct exchange interaction between magnetic impurities
• Magnetization in diluted magnetic semiconductors
• The antiferromagnetic coupling constant
• The impurity concentration
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