TAILIEUCHUNG - New insights on the mechanism of semiconductor nanostructures formed during vapor transport at atmospheric pressure

The surface morphology and structural characteristics of synthesized ZnO nanostructured materials revealed a highly crystalline structure with an average diameter of about 30 nm and length of several micrometers. The mechanism of co-deposition of ZnO nanowires and nanotetrapods during vapor transport at atmospheric pressure was proposed. | Journal of Science and Technology 54 (5A) (2016) 107-117 NEW INSIGHTS ON THE MECHANISM OF SEMICONDUCTOR NANOSTRUCTURES FORMED DURING VAPOR TRANSPORT AT ATMOSPHERIC PRESSURE Tran Trung1, *, Hoang Van Han1, Nguyen Van Hieu2,** 1 2 Hung-Yen University of Technology and Education, Khoai Chau, Hung-Yen, Vietnam International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), 1-Dai Co Viet road, Hanoi, Vietnam. * Email: tr_trunghut@ Received: 15 July 2016; Accepted for publication: 2 December 2016 ABSTRACT Co-deposition of two types of high aspect ratio nanostructured ZnO involving nanowires and nanotetrapods with a uniform structure were carried out through thermal evaporation and vapor transportation of a mixture of highly pure ZnO and graphite powders in 1:1 weight ratio. The mixture was heated at 1100 oC under various flow rates of N2 and air mixture. The surface morphology and structural characteristics of synthesized ZnO nanostructured materials revealed a highly crystalline structure with an average diameter of about 30 nm and length of several micrometers. The mechanism of co-deposition of ZnO nanowires and nanotetrapods during vapor transport at atmospheric pressure was proposed. Keywords: ZnO nanowires, nanotetrapods, high aspect ratio, co-deposition, vapor phase. 1. INTRODUCTION Among the various classes of one-dimensional nanostructures, semiconductor nanowires are a result of anisotropic nanostructure having the diameter in the order of a nanometer, usually constrained to several tens of nanometers or less and an unconstrained length. These onedimensions that can be advantageous are the small diameters, large surface area and smooth surfaces of the nanowire materials, then they offer unique opportunities to control the density of states of semiconductors, and in turn their electronic and optical properties. Then semiconductor nanowires possess several unique characteristics. Their ability to be

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