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The main contents of the chapter consist of the following: Introduction, the basic structure of MOSFET, qualitative operation of MOSFET, operation with gate-voltage VG=0, channel for current flow, applying a small VDS, operation as VDS is Increased. | Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad MOS Field-Effect Transistors MOSFETs Lecture No. 27 Contents: Introduction The Basic Structure of MOSFET Qualitative Operation of MOSFET Operation with Gate-Voltage VG=0 Channel for Current Flow Applying a Small VDS Operation as VDS is Increased 2 Nasim Zafar. Lecture No. 27 MOS Field-Effect Transistors MOSFETs Reference: Chapter-4.1 Microelectronic Circuits Adel S. Sedra and Kenneth C. Smith. 3 Nasim Zafar. Different Types of FETs Junction FET (JFET) Metal-Oxide-Semiconductor FET (MOSFET) Metal-Semiconductor FET (MESFET) 4 Nasim Zafar. Different Types of FETs Junction FET (JFET) The gate-channel insulator is the DEPLETION REGION, and is the same material as the channel. 5 Nasim Zafar. Different Types of FETs Metal-Oxide-Semiconductor FET (MOSFET) The gate-channel insulator is made out of dielectric;SiO2 6 Nasim Zafar. Different Types of FETs Metal-Semiconductor FET (MESFET) 7 Nasim Zafar. The gate is formed by Schottky barrier to the semiconductor layer. The gate-channel insulator consists of the DEPLETION REGION, i.e. the same material as the channel. Very similar to the JFET MOS (Metal-Oxide-Semiconductor) Assume work function of metal and semiconductor are same. 8 Nasim Zafar. Metal Oxide Semiconductor Field Effect Transistors MOSFET 9 Nasim Zafar. Circuit Symbol (NMOS) Enhancement-Type G D S B (IB=0, should be reverse biased) ID= IS IS IG= 0 G-Gate D-Drain S-Source B-Substrate or Body 10 Nasim Zafar. MOSFET Voltage Controlled Current Device MOS: Physical Structure-Metal Oxide Semiconductor FET: Device Operation-Field Effect Transistor The current controlled mechanism is based on an electric field established by the voltage applied to the control terminal – GATE. Uni-polar: Current is conducted by only one type of carrier. 11 Nasim Zafar. Introduction Silicon is the main choice of semiconductor used. Some other more common . | Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad MOS Field-Effect Transistors MOSFETs Lecture No. 27 Contents: Introduction The Basic Structure of MOSFET Qualitative Operation of MOSFET Operation with Gate-Voltage VG=0 Channel for Current Flow Applying a Small VDS Operation as VDS is Increased 2 Nasim Zafar. Lecture No. 27 MOS Field-Effect Transistors MOSFETs Reference: Chapter-4.1 Microelectronic Circuits Adel S. Sedra and Kenneth C. Smith. 3 Nasim Zafar. Different Types of FETs Junction FET (JFET) Metal-Oxide-Semiconductor FET (MOSFET) Metal-Semiconductor FET (MESFET) 4 Nasim Zafar. Different Types of FETs Junction FET (JFET) The gate-channel insulator is the DEPLETION REGION, and is the same material as the channel. 5 Nasim Zafar. Different Types of FETs Metal-Oxide-Semiconductor FET (MOSFET) The gate-channel insulator is made out of dielectric;SiO2 6 Nasim Zafar. Different Types of FETs .
